Many MindedGlobalFoundries targets 2030 for cheaper semiconductors using FDX Fusion
GlobalFoundries VP Sudipto Bose details FDX Fusion technology, which achieves 7nm-class performance without EUV lithography. The technology uses advanced planar transistors instead of FinFETs and targets 8nm-class logic density. Commercial production begins in 2028, with high-volume manufacturing planned for 2030. FDX Fusion supports 500 GHz fT/fmax performance and targets connectivity applications including Wi-Fi, Bluetooth, cellular, and satellite communications. It also serves edge processors and automotive radar at 81 GHz.
The technology’s key innovation is using deep ultraviolet (DUV) lithography and multipatterning for critical layers to achieve higher density than conventional 7nm nodes. However, FDX Fusion has lower transistor density than standard 7nm-class nodes and requires multipatterning due to tight gate and metal pitches. GlobalFoundries has 100-200 Gb per lambda data center applications using this technology, with high double-digit customers ramping up adoption.
This advancement moves abundance for connectivity tech by enabling cheaper semiconductor production at scale. As FDX Fusion targets 2030 for high-volume manufacturing, it could reduce costs for everyday devices like smartphones and routers that rely on radio frequency processing. The real impact hinges on overcoming the transistor density tradeoff and multipatterning challenges to deliver cost savings without compromising performance.
What to watch: Whether FDX Fusion’s lower transistor density and multipatterning requirements limit its cost advantages in mass production. The source notes this technology targets 8 years after GlobalFoundries last abandoned 7nm FinFET development, suggesting significant progress but with unresolved technical hurdles.
Source: Tom's Hardware